STPA2203C is a new turbomolecular pump designed for use in semiconductor applications. It has advanced rotor technology that gives class-leading performance for maximum process flexibility. A new half rack controller gives additional space savings and incorporates d.c. drive technology for battery-free operation.

Features and Benefits

  • Advanced rotor design  
    • Higher gas throughput
    • Maximized process flexibility
  • 5 Axis Magnetic Suspension System  
    • Zero contamination
    • Low maintenance
  • Corrosion Resistant  
    • Harsh process compatible
    • Increased life
  • Compact design  
    • Small footprint
    • Half rack controller
  • Advanced controller design  
    • Auto tuning
    • Self diagnostic functions
    • d.c. motor drive
    • Battery-free operation


  • Plasma etch (chlorine, fluorine and bromine chemistries) for metal (aluminum), tungsten and dielectric (oxide) and polysilicon
  • Electron cyclotron resonance (ECR) etch
  • Film deposition CVD, PECVD, ECRCVD, MOCVD
  • Sputtering
  • Ion implantation source, beam line pumping end station
  • MBE
  • Diffusion
  • Photo resist stripping
  • Crystal/epitaxial growth
  • Wafer inspection
  • Load lock chambers
  • Scientific instruments: surface analysis, mass spectrometry, electron microscopy
  • High energy physics: beam lines, accelerators
  • Radioactive applications: fusion systems, cyclotrons
Technical data  
Inlet flange ISO250F
Outlet port KF40
Purge port KF10
Water cooling fitting PT1/4
Pumping Speed  
N2 2200 ls-1
H2 1700 ls-1
Compression ratio  
N2 >108
H2 >2.5 x 104
Ultimate pressure 10-6 Pa (10-8 Torr)
Maximum allowable backing pressure 400 Pa (3 Torr)
Maximum Nitrogen throughput 1500 sccm
Rated speed 27000 rpm
Starting time 7 min
Mounting position Any
Water cooling flow 2 lmin-1
Water cooling temperature 5-25 °C
Pressure 0.3 MPa
Recommended purge gas flow 20 sccm
Input voltage 200 to 240 (± 10) V a.c.
Power consumption 1.5 kVA
Pump weight 61 kg
Controller weight 12 kg