STPH301C

Edwards high performance STPH301C turbomolecular pump has been designed for use in the harshest of semiconductor applications. The pumps field proven reliability and class-leading performance give maximum process flexibility.

Features and Benefits

  • Advanced rotor technology  
    • Higher gas throughput
    • Maximized process flexibility
    • Oil free
    • Low vibration
    • High reliability
    • Maintenance free
    • Harsh process compatible
    • Increased life
  • Advanced controller design  
    • Auto tuning
    • Self diagnostic functions
    • d.c. motor drive
    • Battery-free operation
  • Compact design  
    • Small footprint
    • Half rack controller
  • 5 axis magnetic suspension system
    • Zero contamination
    • Low maintenance
  • Any orientation operation

Applications

  • Plasma etch (chlorine, fluorine and bromine chemistries) for metal (aluminum), tungsten and dielectric (oxide) and polysilicon
  • Electron cyclotron resonance (ECR) etch
  • Film deposition CVD, PECVD, ECRCVD, MOCVD
  • Sputtering
  • Ion implantation source, beam line pumping end station
  • MBE
  • Diffusion
  • Photo resist stripping
  • Crystal/epitaxial growth
  • Wafer inspection
  • Load lock chambers 
  • Scientific instruments: surface analysis, mass spectrometry, electron microscopy
  • High energy physics: beam lines, accelerators
  • Radioactive applications: fusion systems, cyclotrons
Technical data  
Inlet flange ISO100K
Outlet port KF40
Purge port KF10
Water cooling fitting PT1/4
Pumping Speed  
N2 300 ls-1
H2 200 ls-1
Compression ratio  
N2 >108
H2 103
Ultimate pressure with bake out heating 10-7 Pa (10-9 Torr)
Max continuous outlet pressure 660 Pa (5 Torr)
Max Nitrogen throughput 2500 sccm
Rated speed 48000 rpm
Starting time 4 min
Max inlet flange temperature 120 °C
Input voltage 100 to 120 (± 10) V a.c. or
  200 to 240 (± 10) V a.c.
Power consumption 0.6 kVA
Pump weight 15 kg
Controller weight 9 kg