STPA803C turbomolecular pump is designed for use in semiconductor applications. Advanced rotor technology gives class-leading performance for maximum process flexibility.

Features and Benefits

  • Advanced rotor technology 
    • Maximized process flexibility
    • Oil free
    • Low vibration
    • High reliability
    • Maintenance free
    • Harsh process compatible
    • Increased life
  • Advanced controller design 
    • Auto tuning
    • Self diagnostic functions
    • d.c. motor drive
    • Battery-free operation
  • Compact design 
    • Small footprint
    • Half rack controller


  • Plasma etch (chlorine, fluorine and bromine chemistries) for metal (aluminum), tungsten and dielectric (oxide) and polysilicon
  • Electron cyclotron resonance (ECR) etch
  • Film deposition CVD, PECVD, ECRCVD, MOCVD
  • Sputtering
  • Ion implantation source, beam line pumping end station
  • MBE
  • Diffusion
  • Photo resist stripping
  • Crystal/epitaxial growth
  • Wafer inspection
  • Load lock chambers
  • Scientific instruments: surface analysis, mass spectrometry, electron microscopy
  • High energy physics: beam lines, accelerators
  • Radioactive applications: fusion systems, cyclotrons
Technical data  
Inlet flange ISO160F
Outlet port KF40
Purge port KF10
Water cooling fitting PT1/4
Pumping Speed  
N2 800 ls-1
H2 520 ls-1
Compression ratio  
N2 >108
H2 103
Ultimate pressure with bake out heating 10-7 Pa (10-9 Torr)
Max continuous outlet pressure 270 Pa (2 Torr)
Max Nitrogen throughput 1500 sccm
Rated speed 32500 rpm
Starting time 7 min
Max inlet flange temperature 120 °C
Input voltage 200 to 240 (± 10) V a.c.
Power consumption 0.85 kVA
Pump weight 39 kg
Controller weight 9 kg